december 2011 fdp4n60nz / fdpf4n60n z n-channel mosfet ?2011 fairchild semiconductor corporation fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 1 unifet-ii tm mosfet maximum ratings t c = 25 o c unless otherwise noted* *drain current limited by maximum junction temperature thermal characteristics symbol parameter fdp4n60nz FDPF4N60NZ units v dss drain to source voltage 600 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 3.8 3.8* a -continuous (t c = 100 o c) 2.3 2.3* i dm drain current - pulsed (note 1) 15 15* a e as single pulsed avalanche energy (note 2) 223.8 mj i ar avalanche current (note 1) 3.8 a e ar repetitive avalanche energy (note 1) 8.9 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 89 28 w - derate above 25 o c 0.71 0.22 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp4n60nz FDPF4N60NZ units r jc thermal resistance, junction to case 1.4 4.5 o c/w r cs thermal resistance, case to sink typ 0.5 r ja thermal resistance, junction to ambient 62.5 62.5 fdp4n60nz / FDPF4N60NZ n-channel mosfet 600v, 3.8a, 2.5 features ?r ds(on) = 1.9 ( typ.)@ v gs = 10v, i d = 1.9a ? low gate charge ( typ. 8.3nc) ?low c rss ( typ. 3.7pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ?rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, prov ide superior switching performance, and withstand high en ergy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switching mode power supplies and active power factor correction. g s d g s d to-220 fdp series g d s to-220f fdpf series g s d
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp4n60nz fdp4n60nz to-220 50 FDPF4N60NZ FDPF4N60NZ to-220f 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 a v ds = 480v, v gs = 0v, t c = 125 o c- - 10 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 1.9a - 1.9 2.5 g fs forward transconductance v ds = 20v, i d = 1.9a (note 4) -3.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 385 510 pf c oss output capacitance - 40 60 pf c rss reverse transfer capacitance - 3.7 5 pf q g(tot) total gate charge at 10v v ds = 480v i d = 3.8a v gs = 10v (note 4, 5) - 8.3 10.8 nc q gs gate to source gate charge - 2.1 - nc q gd gate to drain ?miller? charge - 3.3 - nc t d(on) turn-on delay time v dd = 300v, i d = 3.8a r g = 25 (note 4, 5) -12.735.4ns t r turn-on rise time - 15.1 40.2 ns t d(off) turn-off delay time - 30.2 70.4 ns t f turn-off fall time - 12.8 35.6 ns i s maximum continuous drain to source diode forward current - - 3.8 a i sm maximum pulsed drain to source diode forward current - - 15 a v sd drain to source diode forward voltage v gs = 0v, i sd = 3.8a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 3.8a di f /dt = 100a/ s (note 4) - 168 - ns q rr reverse recovery charge - 0.7 - c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 31mh, i as = 3.8a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 3.8a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2468 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain cu rrent[a] v gs , gate-source voltage[v] 0.1 1 10 30 0.02 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 0.0 1.5 3.0 4.5 6.0 7.5 9.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.00.40.81.21.6 0.1 1 10 40 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.01.53.04.56.07.59.0 0 2 4 6 8 10 *note: i d = 3.8a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 1 10 100 700 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 1.9a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 30 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 1 2 3 4 r jc = 4.5 o c/w i d , drain current [a] t c , case temperature [ o c ] v gs = 10v 0.01 0.1 1 1 5 t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a)
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 4.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [ z t jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220
fdp4n60nz / fdpf4n60n z n-channel mosfet fdp4n60nz / FDPF4N60NZ rev.c0 www.fairchildsemi.com 9 package dimensions dimensions in millimeters to-220f * front/back side isolation voltage : ac 2500v
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